JPS63207165A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63207165A
JPS63207165A JP62041872A JP4187287A JPS63207165A JP S63207165 A JPS63207165 A JP S63207165A JP 62041872 A JP62041872 A JP 62041872A JP 4187287 A JP4187287 A JP 4187287A JP S63207165 A JPS63207165 A JP S63207165A
Authority
JP
Japan
Prior art keywords
reference resistor
resistance
resistor
converter
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62041872A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0573274B2 (en]
Inventor
Hideyuki Kondo
近藤 日出行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62041872A priority Critical patent/JPS63207165A/ja
Publication of JPS63207165A publication Critical patent/JPS63207165A/ja
Publication of JPH0573274B2 publication Critical patent/JPH0573274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP62041872A 1987-02-24 1987-02-24 半導体装置 Granted JPS63207165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62041872A JPS63207165A (ja) 1987-02-24 1987-02-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62041872A JPS63207165A (ja) 1987-02-24 1987-02-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS63207165A true JPS63207165A (ja) 1988-08-26
JPH0573274B2 JPH0573274B2 (en]) 1993-10-14

Family

ID=12620353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62041872A Granted JPS63207165A (ja) 1987-02-24 1987-02-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS63207165A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057590A (en) * 1997-08-23 2000-05-02 Winbond Electronics Corp. Structure of polysilicon load for static random access memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057590A (en) * 1997-08-23 2000-05-02 Winbond Electronics Corp. Structure of polysilicon load for static random access memory

Also Published As

Publication number Publication date
JPH0573274B2 (en]) 1993-10-14

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